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PD - 96164
IRLML2803GPBF
l l l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free
HEXFET(R) Power MOSFET
D
VDSS = 30V
G S
RDS(on) = 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3TM
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ ,TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyg Peak diode Recovery dv/dtd Junction and Storage Temperature Range
Max.
1.2 0.93 7.3 540 4.3 20 3.9 5.0 -55 to + 150
Units
A mW mW/C V mJ V/ns C
c
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
f
Typ.
---
Max.
230
Units
C/W
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07/23/08
IRLML2803GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss
Min. 30 1.0 0.87
Typ. 0.029 3.3 0.48 1.1 3.9 4.0 9.0 1.7 85 34 15
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.25 VGS = 10V, ID = 0.91A 0.40 VGS = 4.5V, ID = 0.46A V VDS = VGS, ID = 250A S VDS = 10V, ID = 0.46A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.0 ID = 0.91A 0.72 nC VDS = 24V 1.7 VGS = 10V, See Fig. 6 and 9 VDD = 15V ID = 0.91A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 26 22 0.54 7.3 1.2 40 32 V ns nC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.91A, VGS = 0V TJ = 25C, IF = 0.91A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. Limited by TJmax, starting TJ = 25C, L = 9.4mH, RG = 25, IAS = 0.9A.
ISD 0.91A, di/dt 120A/s, VDD V(BR)DSS,
TJ 150C
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IRLML2803GPBF
10
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
I D , Drain-to-Source Current (A)
1
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
1
3.0V
3.0V 20s PULSE WIDTH TJ = 25C A
0.1 1 10
0.1
0.1 0.1 1
20s PULSE WIDTH TJ = 150C A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
I D , Drain-to-Source Current (A)
TJ = 25C TJ = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 0.91A
1.5
1
1.0
0.5
0.1 3.0
V DS = 10V 20s PULSE WIDTH
3.5 4.0 4.5 5.0 5.5 6.0
6.5
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = 10V
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLML2803GPBF
160 140 120 100 80 60 40 20 0 1 10 100
C, Capacitance (pF)
Ciss
Coss
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 0.91A V DS = 24V V DS = 15V
16
12
8
Crss
4
A
0 0.0
FOR TEST CIRCUIT SEE FIGURE 9
1.0 2.0 3.0 4.0 5.0
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 150C
I D , Drain Current (A)
10 10s
1
TJ = 25C
100s 1 1ms
0.1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
0.1 1
TA = 25C TJ = 150C Single Pulse
10
10ms 100
1.4
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRLML2803GPBF
QG
V DS VGS RG 10V
RD
10V
VG
QGS
QGD
D.U.T.
+
- VDD
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
+ V - DS
D.U.T. VGS
3mA
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50 0.20 0.10
10
0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
1
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML2803GPBF
15V
18
EAS, Single Pulse Avalanche Energy (mJ)
16 14 12 10 8 6 4 2 0 25 50 75
VDS
L
DRIVER
ID 0.57A 0.75A BOTTOM 0.90A
TOP
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
125
150
Starting T J, Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy vs. Drain Current
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
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IRLML2803GPBF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
6 D A 5
DIMENSIONS
SYMBOL MILLIMETERS MIN MAX INCHES MIN MAX
3 6 E1 1 2
E
0.15 [0.006] M C B A
5
B
e e1
A A2 C H 4
L1
c
0.10 [0.004] C
L2 3X L 7
A1
3X b
0.20 [0.008] M C B A
A A1 A2 b c D E E1 e e1 L L1 L2
0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0
1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8
"$
0.0004
"$ ! " '" #& "& &$ % !
0
## # # ! ' ! # $$ 7T8 7T8A !#
REF BSC 8
Recommended Footprint
0.972
0.950
NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.802
2.742
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
XA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S
Y = YEAR W = WEEK
PART NUMBER
A YW LC
HALOGEN FREE INDICATOR LOT CODE
@6S ! !! !" !# !$ !% !& !' !( !
! " # $ % & ' (
XPSF X@@F ! " #
X 6 7 8 9
PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free
!# !$ !% XPSF X@@F !& !' !( "
Y a
XA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ !% !& !' !( ! 6 7 8 9 @ A B C E F X 6 7 8 9
$ $ $!
Y a
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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IRLML2803GPBF
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 )
1.85 ( .072 ) 1.65 ( .065 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2008
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